Investigation of the ablation of zinc oxide thin films on copper-indium-selenide layers by ps laser pulses
Identifieur interne : 002B11 ( Main/Repository ); précédent : 002B10; suivant : 002B12Investigation of the ablation of zinc oxide thin films on copper-indium-selenide layers by ps laser pulses
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Abstract
The selective laser structuring of zinc oxide thin films, which serve as the transparent negative electrodes of copper-indium-selenide (CIS) thin film solar cells, is of great common interest as it can replace the mechanical scribing of the so-called pattern 3 (P3) process step for the monolithic serial interconnection of these cells. We present an investigation of the single-pulse ablation behavior of zinc oxide thin films on glass substrates and on CIS layers and of trench scribing with 10-ps laser pulses at 1064 nm and at 532 nm. We show that the ablation behavior strongly depends on the properties of the underling substrate and that the energy required to ablate a specific volume using induced laser processes (often referred to as 'lift off') is considerably reduced compared to the direct ablation of zinc oxide. With laser powers below 2 W at a wavelength of 1064 nm process speeds of 6 m/s for the P3 process have been achieved.
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Huber</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Avancis GmbH, Otto-Hahn-Ring 6</s1><s2>81739 Munich</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region><settlement type="city">Munich</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0320782</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0320782 INIST</idno><idno type="RBID">Pascal:11-0320782</idno><idno type="wicri:Area/Main/Corpus">002E47</idno><idno type="wicri:Area/Main/Repository">002B11</idno></publicationStmt><seriesStmt><idno type="ISSN">0947-8396</idno><title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title><title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Confocal microscopy</term><term>Depth profiles</term><term>Laser ablation technique</term><term>Laser irradiation</term><term>Laser pulse</term><term>Lift off</term><term>Patterning</term><term>Radiation effects</term><term>Thin films</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Impulsion laser</term><term>Irradiation laser</term><term>Formation motif</term><term>Effet rayonnement</term><term>Microscopie confocale</term><term>Décollement épitaxique</term><term>Profil profondeur</term><term>Méthode ablation laser</term><term>Oxyde de zinc</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The selective laser structuring of zinc oxide thin films, which serve as the transparent negative electrodes of copper-indium-selenide (CIS) thin film solar cells, is of great common interest as it can replace the mechanical scribing of the so-called pattern 3 (P3) process step for the monolithic serial interconnection of these cells. We present an investigation of the single-pulse ablation behavior of zinc oxide thin films on glass substrates and on CIS layers and of trench scribing with 10-ps laser pulses at 1064 nm and at 532 nm. We show that the ablation behavior strongly depends on the properties of the underling substrate and that the energy required to ablate a specific volume using induced laser processes (often referred to as 'lift off') is considerably reduced compared to the direct ablation of zinc oxide. 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All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0320782</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. A, Materials science & processing : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The selective laser structuring of zinc oxide thin films, which serve as the transparent negative electrodes of copper-indium-selenide (CIS) thin film solar cells, is of great common interest as it can replace the mechanical scribing of the so-called pattern 3 (P3) process step for the monolithic serial interconnection of these cells. We present an investigation of the single-pulse ablation behavior of zinc oxide thin films on glass substrates and on CIS layers and of trench scribing with 10-ps laser pulses at 1064 nm and at 532 nm. We show that the ablation behavior strongly depends on the properties of the underling substrate and that the energy required to ablate a specific volume using induced laser processes (often referred to as 'lift off') is considerably reduced compared to the direct ablation of zinc oxide. With laser powers below 2 W at a wavelength of 1064 nm process speeds of 6 m/s for the P3 process have been achieved.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Impulsion laser</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Laser pulse</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Impulsión láser</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Irradiation laser</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Laser irradiation</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Irradiación láser</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Formation motif</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Patterning</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Radiation effects</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Microscopie confocale</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Confocal microscopy</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Microscopía confocal</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Décollement épitaxique</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Lift off</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Desprendimiento epitáxico</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Depth profiles</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Méthode ablation laser</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Laser ablation technique</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche mince</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0><s5>16</s5></fC03><fN21><s1>220</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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